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首页> 外文期刊>Photonics Technology Letters, IEEE >Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip
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Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip

机译:通过在芯片的长边上增加一条金属条,增强了基于GaN的侧面LED的电流分布

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摘要

The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.
机译:作者提出了一种简单的方法,即通过在芯片的长边上添加金属条来增强GaN基侧面发光二极管(LED)的电流扩散。发现通过添加金属条,LED的20 mA输出功率可以从8.54增强到9.2 mW。还发现,通过化学地部分减薄金属条,可以将LED输出功率进一步提高到9.68 mW。这些改进可以归因于LED芯片上更均匀的电流分布。

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