机译:基于GaN的倒装芯片LED,具有高反射ITO / DBR P型和通过基于空穴的N型触点,用于增强电流扩展和光提取
School of Power and Mechanical Engineering Wuhan University Wuhan 430072 China;
School of Power and Mechanical Engineering Wuhan University Wuhan 430072 China;
School of Power and Mechanical Engineering Wuhan University Wuhan 430072 China;
School of Power and Mechanical Engineering Wuhan University Wuhan 430072 China;
Shenzhen Top Chip Technology Co. LTD Shenzhen 518000 China;
School of Power and Mechanical Engineering Wuhan University Wuhan 430072 China;
机译:基于GaN的倒装芯片LED,具有高反射ITO / DBR P型和通过基于空穴的N型触点,用于增强电流扩展和光提取
机译:用于倒装芯片LED的p型GaN的低电阻和高反射率Sb掺杂SnO_2 / Ag欧姆接触
机译:使用倒装芯片发光二极管的透明夹层,与p型GaN形成低电阻和高反射性欧姆接触
机译:高反射率和热稳定性Cr基反射器和GaN基倒装芯片发光二极管的n型欧姆接触
机译:高效发光二极管中增强电流扩散和光提取的新型材料和制造技术
机译:网格化p型接触结构对深紫外倒装芯片发光二极管光提取效果的影响
机译:使用两步粗糙化方法增强独立式GaN基倒装芯片发光二极管的光提取