UV Enhanced Field Emission Properties of ZnO Nanosheets Grown on a Si Substrate

摘要

In this research, ZnO nanosheets were successfully grown on Si substrate by using an aqueous solution at room temperature. All the synthesized ZnO nanosheets exhibited hexagonal wurtzite structures. The thin nanosheets perpendicular to the Si substrate surface interwove into networks and formed a continuous nanosheet film. The field enhancement factors for the field emission (FE) devices were approximately 1014 in the dark and 1743 under UV illumination, respectively. The improvement in the FE properties under UV illumination is attributed to the generation of a large number of excited electrons and the edge effect, which demonstrates that the presented route is a simple route for realizing FE devices.