Field emission properties of ZnO nanosheets grown on a Si substrate

摘要

In this paper, vertical ZnO nanosheets are synthesized on a Si substrate using a simple solution-based method at room-temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net-shaped and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The length and diameter of the ZnO nanosheets was 1.8 mu m and 21 nm, respectively. The turn-on electric fields and enhancement factor beta of devices were measured as 5.4 V.mu m(-2) and 1014 V.mu m(-2), respectively. (C) 2015 Elsevier B.V. All rights reserved.