Over 200-mW operation of single-lateral mode 780-nm laser diodeswith window-mirror structure

摘要

The high-power operation of the lateral mode stabilized 780-nmnAlGaAs laser diode (LD) with the window-mirror structure has beennachieved. The stable lateral mode operation up to 250 mW is realized.nThis is the highest power record among the narrow stripe LDs with thenwavelength of 780 nm. This LD is suitable for the next generationnhigh-speed (16-24×) CD-R/RW drives needing 200 mW class LDs