Highly strained GaInAs-GaAs quantum-well vertical-cavitysurface-emitting laser on GaAs (311)B substrate for stable polarizationoperation

摘要

We have realized high-quality GaInAs-GaAs quantum wells (QWs) withnhigh strain of over 2% on GaAs (311)B substrate for a polarizationncontrolled vertical-cavity surface-emitting laser (VCSEL). By increasingnthe In composition in GaInAs, the optical anisotropy innphotoluminescence (PL) intensity was increased. The anisotropy of 50%nwas obtained at 1.15 Μm emission wavelength. We have demonstratednedge-emitting lasers and VCSELs emitting at over 1.1 Μm on GaAsn(311)B substrate for the first time. The 1.15-Μm edge-emitting lasernshowed a characteristic temperature of 210 K and the threshold currentndensity of 410 A/cm2. The threshold current and lasingnwavelength of VCSELs are 0.9 mA and 1.12 Μm, respectively. Thenorthogonal polarization suppression ratio was 25 dB and CW operation upnto 170°C without a heat sink was achieved