首页> 外文期刊>Selected Topics in Quantum Electronics, IEEE Journal of >Low Hysteresis Threshold Current (39 mA) Active Multimode-Interferometer (MMI) Bistable Laser Diodes Using Lateral-Modes Bistability
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Low Hysteresis Threshold Current (39 mA) Active Multimode-Interferometer (MMI) Bistable Laser Diodes Using Lateral-Modes Bistability

机译:低迟滞阈值电流(39 mA),采用横向模式双稳态的有源多模干涉仪(MMI)双稳态激光二极管

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摘要

We demonstrate low hysteresis threshold current (39 mA) bistable laser diodes (BLDs), with maintaining sufficient hysteresis window (7 mA, 18% of the hysteresis threshold), in active multimode-interferometer (MMI) using lateral-modes bistability. The sufficient cross-gain saturation effect, due to the lateral-modes bistability principle, enables wide hysteresis window. By using this principle, we could design the active-MMI BLDs with relatively short saturable-absorber length that has been one of the main causes of high hysteresis threshold current. In the actual design, we reduce the saturable-absorber region length to 25 μm, and thus, we could achieve a low hysteresis current of 39 mA in the active-MMI BLDs with maintaining sufficient hysteresis window for the first time.
机译:我们在使用横向模式双稳态的有源多模干涉仪(MMI)中展示了低滞后阈值电流(39 mA)双稳态激光二极管(BLD),并保持了足够的滞后窗口(7 mA,滞后阈值的18%)。由于横向模式的双稳态原理,足够的交叉增益饱和效应使迟滞窗口变宽。通过使用该原理,我们可以设计具有相对较短的可饱和吸收体长度的有源MMI BLD,这是导致高滞后阈值电流的主要原因之一。在实际设计中,我们将可饱和吸收体区域的长度减小到25μm,因此,在首次保持足够的磁滞窗口的情况下,我们可以在有源MMI BLD中实现39 mA的低磁滞电流。

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