Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array

摘要

We carried out the growth of highly strained GaInAs-GaAs quantum wells (QWs) on a patterned substrate for extending emission wavelength on a GaAs substrate. We examined the shift of photoluminescence wavelength of the QWs and showed a large wavelength shift due to the spatial modulation in well thickness and indium composition. We demonstrated a single-mode multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) array on a patterned GaAs substrate covering a new wavelength window of 1.1-1.2 Μm. By optimizing pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is as large as 77 nm. We carried out a data transmission experiment through 5-km of single-mode fiber with a 2.5 Gb/s/channel. The total throughput reaches 10 Gb/s. The VCSEL-based wavelength-division-multiplexing (WDM) source would be a good candidate for WDM-LAN beyond 10 Gb/s.