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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

机译:GaAs / GaAlAs梯度折射率分离约束异质结构单量子阱激光器中光增益,量子效率和阈值电流的温度依赖性

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摘要

The temperature dependence of the optical gain in graded-index separate-confinement heterostructure single-quantum-well lasers with different quantum-well widths were investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width and the differential quantum efficiency minimum at the kink temperature were analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T/sub 0/ on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width.
机译:研究了具有不同量子阱宽度的梯度折射率分离约束异质结构单量子阱激光器中光学增益的温度依赖性。根据增益谱和峰值增益曲线的温度变化,分析了扭结温度对腔损耗和量子阱宽度的依赖性以及扭结温度下的最小量子效率最小值。根据峰值模态增益与电流的关系随温度和量子阱宽度的变化,讨论了特征温度T / sub 0 /对量子阱宽度,腔损耗和温度范围的依赖性。

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