Improved performance of long-wavelength strained bulk-like semiconductor lasers

摘要

The authors show that the incorporation of either tensile or compressive strain can have significant advantages for long-wavelength bulk-like lasers, with greater advantage being achieved in tensile-strained structures. The differential gain is enhanced compared to unstrained structures and a larger peak gain can be achieved than in comparable structures under biaxial compression. The effect of the spin-orbit interaction on the polarized gain and character of the valence states is calculated as a function of built-in strain. The spin-split-off band is included in the calculations and it is shown that the strain-induced interaction with this band has a significant influence on laser characteristics. The effect of biaxial strain on the major intrinsic loss mechanism of Auger recombination in long-wavelength 1.55- mu m lasers is investigated.