Gain saturation properties of a semiconductor gain medium with tensile and compressive strain quantum wells

摘要

Gain saturation properties of a multiple-quantum-well structure with both tensile and compressively strained quantum wells are investigated analytically. This type of structure has recently been experimentally demonstrated to serve as a basis for the implementation of a two-polarization/two-frequency laser and polarization insensitive travelling wave(TW) amplifier. The performance of these devices strongly depends on the interaction between the TE and TM gains of the structure. The gain medium model appropriate for this type of structure is developed and the rate equation approach is used to describe the saturation properties of TE/TM gains and the coupling between the TE and TM gains due to gain saturation. The minimum amount of coupling between the two is governed by the basic symmetry of the light-hole wavefunction which interacts with photons of both polarization: photon cross-coupling. The finite rate of carrier escape from the quantum wells provides for carrier induced coupling between the populations of the two well types and therefore also couples TE and TM gains: carrier cross-coupling. The performance of a polarization insensitive amplifier, laser, and polarization control element is evaluated as a function of the amount of carrier cross-coupling, which is a structure dependent parameter. A structure with high degree of cross-coupling is desirable for polarization insensitive TW amplifier, while two-polarization lasers and polarization control elements require minimum cross-coupling.