All-selective MOVPE-grown 1.3-Μm strained multi-quantum-wellburied-heterostructure laser diodes

摘要

Strained InGaAsP multi-quantum-well (MQW) double-channelnplanar-buried-hetero (DC-PBH) laser diodes (LDs) were fabricated bynselective metalorganic-vapor-phase epitaxy (MOVPE). In the lasernfabrication process, both the strained MQW active layer and currentnblocking structure were directly formed by selective MOVPE without anynsemiconductor etching process. The LDs are called all-selectivenMOVPE-grown BH LDs. The laser fabrication process can achieve both anprecisely controlled gain waveguide structure and an excellent currentnblocking configuration, realizing the optimized DC-PBH structure. Thesenaspects are essential to the high-performance and low-cost LD, which isnstrongly demanded for optical access network systems ornfiber-to-the-home networks. This paper will show the excellentnhigh-temperature characteristics for 1.3-Μm Fabry-Perot LDs whichnhave a record threshold current of 18 mA with a low-operation current ofn56 mA for 10 mW, and 74 mA for 15 mW at 100°C with extremely highnuniformity. Furthermore, reliable long-term operation at highntemperature (85°C) and high-output power of 15 mW has beenndemonstrated for the first time