首页> 外文期刊>IEEE Journal of Quantum Electronics >Electrooptic effects in GaAs-AlGaAs narrow coupled quantum wells
【24h】

Electrooptic effects in GaAs-AlGaAs narrow coupled quantum wells

机译:GaAs-AlGaAs窄耦合量子阱中的电光效应

获取原文
获取原文并翻译 | 示例
       

摘要

The linear and quadratic electrooptic coefficients in narrownsingle and strongly coupled GaAs-AlxGa1-xAsnquantum wells have been measured. The quadratic electrooptic effect isnenhanced over that of conventional square quantum wells for both TE andnTM polarization in all the structures considered, by up to six times innthe case of 2-nm-wide GaAs-Al0.2Ga0.8As stronglyncoupled quantum wells. The origin of the enhanced quadratic electroopticneffect was found to correlate with a larger red shift in the absorptionnedge exciton and strong Coulombic coupling of the bound exciton statesnwith the quasi-continua
机译:已经测量了狭窄的GaAs-AlxGa1-xAsn量子阱中的线性和二次电光系数。在所有考虑的结构中,对于TE和nTM极化,二次电光效应均比常规的方形量子阱增强,是2nm宽的GaAs-Al0.2Ga0.8As强耦合量子阱的两倍。发现增强的二次电光效应的起因与吸收能级激子的较大红移以及结合激子态与准连续体的强库仑耦合有关

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号