首页> 外文期刊>IEE Proceedings. Part J >Coupled-cavity vertical-emitting semiconductor laser for continuous-wave terahertz emission
【24h】

Coupled-cavity vertical-emitting semiconductor laser for continuous-wave terahertz emission

机译:耦合腔垂直发射半导体激光器用于连续波太赫兹发射

获取原文
获取原文并翻译 | 示例
           

摘要

A coupled-cavity vertical-emitting semiconductor laser is built. It intrinsically allows the beating of two longitudinal modes owing to a weak coupling between the matched optical cavities. Terahertz electromagnetic waves have to be produced by external photomixing. First, analytical analysis enables design rules to be applied for such a purpose. Secondly, the fabrication and characterisation of a coupled-cavity VCSEL operating at 980 nm is described. The fabricated device shows a low laser threshold and exhibits the coupling between both cavities, although continuous-wave terahertz two-mode beating has not yet been observed.
机译:建立了耦合腔垂直发射半导体激光器。由于匹配的光学腔之间的弱耦合,它本质上允许跳动两个纵向模式。太赫兹电磁波必须通过外部光混合产生。首先,分析分析可以将设计规则应用于此目的。其次,描述了在980 nm工作的耦合腔VCSEL的制造和特性。尽管尚未观察到连续波太赫兹双模跳动,但制造的设备显示出较低的激光阈值并在两个腔之间表现出耦合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号