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Advanced physical model for the optimisation of the width of a resistive Schottky barrier field plate

机译:用于优化电阻肖特基势垒场板宽度的高级物理模型

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摘要

An advanced physical model based on a solution of Laplace's equation for a set of prescribed boundary conditions is developed, which describes the potential distribution across a resistive Schottky-barrier field plate (RESP). The model serves to ascertain an optimised RESP width, for an optimised RESP sheet resistance, for any potential bias. Optimising the width of the RESP for an optimised sheet resistance will enhance the reverse breakdown voltage handling capability of a Schottky-barrier diode whose periphery is terminated by such a structure. Using an optimised RESP structure will reduce the material costs and improve the high-speed operation of diodes which are edge-terminated in this manner.
机译:建立了基于拉普拉斯方程组的一组规定边界条件的解的高级物理模型,该模型描述了跨阻性肖特基势垒场板(RESP)的电势分布。该模型用于确定优化的RESP宽度,优化的RESP薄层电阻以及任何潜在的偏差。通过优化RESP的宽度以获得最佳的薄层电阻,将增强肖特基势垒二极管的反向击穿电压处理能力,该肖特基势垒二极管的外围由此结构终止。使用优化的RESP结构将降低材料成本并改善以这种方式被边缘端接的二极管的高速运行。

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