Design centring for yield and noise figure improvement of GaAs MESFETs

摘要

An algorithm to determine the optimum nominal value of geometrical and material parameters in device modelling is proposed. The algorithm uses the yield and variance prediction formula and Monte-Carlo analysis. The optimum parameters are obtained when the yield becomes maximum. The performance specification of the noise figure must also be satisfied. Another algorithm for determining the optimal noise figure is derived. The noise figure is represented by geometrical and material parameters in simple device modelling. The algorithms are applied to a GaAs MESFET.