Effect of carrier lifetimes on forward characteristics ofMOS-controlled thyristors

摘要

The effect of different carrier lifetimes on the forward I-Vncharacteristics of a MOS-controlled thyristor (MCT) has been studiednusing numerical simulation. Those physical mechanisms that have a strongneffect on the forward operation of the MCT have been identified andntaken into account. The results show that in the design tradeoff betweennthe switching speed and forward current capability there exists ancharacteristic lifetime below which the operation mode changes fromnthyristor-like to IGBT-like, and in the transfer between them a regionnof differential negative resistance exists