Parasitic series resistance-independent method for device-model parameter extraction

摘要

A new method is presented that permits the extraction of a semiconductor device's intrinsic model parameters from its experimental extrinsic forward I-V characteristics, independently of the parasitic resistance that might be present in series within the real device. The extraction is performed from an auxiliary function which contains the integral of the experimentally measured data. Integrating the data also serves as a smoothing procedure. The diode quality factor, reverse current and series resistance parameters of a single exponential diode model are extracted from a real p-n junction diode in order to illustrate the method.