Parasitic series resistance-independent method for device-modelparameter extraction

摘要

A new method is presented that permits the extraction of ansemiconductor device's intrinsic model parameters from its experimentalnextrinsic forward I-V characteristics, independently of the parasiticnresistance that might be present in series within the real device. Thenextraction is performed from an auxiliary function which contains thenintegral of the experimentally measured data. Integrating the data alsonserves as a smoothing procedure. The diode quality factor, reversencurrent and series resistance parameters of a single exponential diodenmodel are extracted from a real p-n junction diode in order tonillustrate the method