GaAs MESFET with low current capability grafted onto quartzsubstrate

摘要

DC characteristics of a GaAs MESFET, which is grafted onto annoptically flat quartz substrate, are presented and discussed. Thenauthors utilised a GaAs MESFET having small current capability in ordernto avoid heat effects and to magnify the effects brought byntransplantation. Improved pinch-off and saturation behaviours, as wellnas increased drain-gate breakdown voltage, stemming from the insulatingnproperty of the quartz substrate were observed. Negative shift ofnthreshold voltage and degraded low-field mobility were also observed andnboth were attributed to the stresses acting on the active region