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Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect.

机译：由于新的光伏自偏置边缘效应，平面GaAs MESFET中的电流增益机制。

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A significant new internal gain effect, in planar MESFETs has been discovered which we call the "photovoltaic self-biasing edge-effect." The edge-effect can be exploited to attain up to a factor of ten improvement in detector photosensitivity.

机译：在平面MESFET中发现了一个重要的新内部增益效应，我们称其为“光伏自偏置边缘效应”。可以利用边缘效应使检测器的光敏度提高多达十倍。

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Abbott Derek; Eshraghian K.;
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年度 1996
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专利

1. Mechanism of drain current droop in GaAs MESFETs [J] . Ladbrooke P.H., Jastrzebski A.K., Donarski R.J., Electronics Letters . 1995,第21期

机译：GaAs MESFET中漏极电流下降的机制
2. MODIFIED TWO-DIMENSIONAL ANALYTICAL MODEL FOR CURRENT-VOLTAGE ANDBREAKDOWN VOLTAGE CHARACTERISTICS OF GaAs MESFET PLANAR STRUCTURE [J] . RIFAT RAMOVI?, ROBERT ANDRIN Fizika: A journal of experimental and theoretical physics, A. atomic and molecular physics condensed matter physics plasma physics . 1998,第3期

机译：GaAs MESFET平面结构电流-电压和击穿电压特性的修正二维分析模型
3. GAIN AND DARK CURRENT STUDIES ON PLANAR PHOTODETECTORS MADE ON ANNEALED GaAs-ON-Si [J] . F. RIESZ, VO VAN TUYEN, J. VARRIO Acta Physica Polonica. A . 1995,第5期

机译：退火GaAs-on-Si制成的平面光电检测器的增益和暗电流研究
4. High voltage gain MESFET amplifier using self-aligned MOCVD grown planar GaAs nanowires [C] . Zhang Chen, Dowdy Ryan, Li Xiuling Annual Device Research Conference . 2013

机译：使用自对准MOCVD生长的平面GaAs纳米线的高电压增益MESFET放大器
5. Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications. [D] . Feng, Ting. 1999

机译：用于低噪声应用的铜/钛金属化GaAs MESFET和HEMT的制造，测试和可靠性建模。
6. Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures [O] . Piotr Caban, Rafał Pietruszka, Jarosław Kaszewski, 2021

机译：GaAs（100）表面制剂对偶氮/ Al2O3 / P-GaAs光伏结构EQE的影响
7. Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. [O] . Abbott Derek, Eshraghian K. 1996

机译：由于新的光伏自偏置边缘效应，平面GaAs MESFET中的电流增益机制。
8. GaAs MMIC Mixer for 8-12GHz, Based on 0.5 micrometer Gate Length D-MESFETS. Volume 1. Design and Layout (GaAs MMIC Mixer voor 8-12GHz, Gerealiseered Met 0,5 micrometer Gate Lengte D-MESFETS. Deel 1. Ontwerp en Layout). [R] . Tieman, T. C., Grooters, R. 1990

机译：Gaas mmIC混频器，用于8-12GHz，基于0.5微米栅极长度的D-mEsFETs。第1卷。设计和布局（Gaas mmIC混频器，8-12GHz，Gerealiseered met 0,5微米栅极冷却D-mEsFET.selel 1. Ontwerp en Layout）。

Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect.

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