Two-dimensional Mathematical Analysis of a Planar Type Junction Field-effect Transistor

摘要

A two-dimensional mathematical analysis is presented of the steady-state mechanisms of operation within a planar type junction field-effect transistor (JFET). This analysis shows that the potential distribution within the source-drain channel follows from solutions of Poisson's equation rather than from Laplace's equation. In particular, velocity-limited carrier transport produces a region of carrier accumulation in a region of the source-drain channel previously assumed to be depleted of carriers by the gate junction space-charge layers. The results of this two-dimensional mathematical analysis are presented in graphic form.