An AlN Switchable Memory Resistor Capable of a 20-MHz Cycling Rate and 500-picosecond Switching Time

摘要

We report here the operational characteristics of multistable resistance switching devices made from thin sputtered layers of AlN. These devices exhibit switching between high and low resistance states when proper electrical signals are applied. Repetitive switching at 20-MHz rates has been achieved, and switching times in the best units have been observed to be less than 500 picoseconds. These are believed to be the first active electronic switching devices to be reported utilizing AlN.