Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture

摘要

In this work, one diode-one resistor (1D-1R) SiO-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 10 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 10 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.