Integrated One Diode?One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

摘要

We report on a highly compact, one diode?one resistor (1D?1R) nanopillar device architecture for SiO_x-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiO_x-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. ACpulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of highdensity 1D?1R ReRAM with good potential for use in future applications.