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A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

机译：一种基于能够旋转速率依赖性塑性的电阻开关存储器（RRAM）的4晶体管/ 1电阻混合突触（SRDP）

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Valerio Milo; Giacomo Pedretti; Roberto Carboni; Alessandro Calderoni; Nirmal Ramaswamy; Stefano Ambrogio; Daniele Ielmini;
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年度 2018
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1. A Compact Model for Stochastic Spike-Timing-Dependent Plasticity (STDP) Based on Resistive Switching Memory (RRAM) Synapses [J] . Stefano Bianchi, Giacomo Pedretti, Irene Muñoz-Martín, Electron Devices, IEEE Transactions on . 2020,第7期

机译：基于电阻开关存储器（RRAM）突触的随机峰值定时塑性（STDP）的紧凑型模型
2. Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks [J] . Ielmini Daniele Microelectronic Engineering . 2018,第APRa期

机译：具有电阻切换存储器（RRAM）的大脑启发式计算：设备，突触和神经网络
3. Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements [J] . Woo Jiyong, Lee Dongwook, Koo Yunmo, Microelectronic Engineering . 2017,第octa期

机译：基于HfO2的纳米级RRAM器件中用于人工神经元和突触元件的阈值和多级电阻切换特性的双重功能
4. Validation of Spiking Neural Networks Using Resistive-Switching Synaptic Device with Spike-Rate-Dependent Plasticity [C] . Suhyun Bang, Min-Hye Oh, Min-Hwi Kim, International Conference on Electronics, Information, and Communication . 2020

机译：使用具有速率依赖性的可塑性的电阻切换突触设备验证尖峰神经网络
5. Resistive Switching Random Access Memory (RRAM): Analysis, Modeling, and Characterization Toward Practical Applications [D] . Jiang, Zizhen. 2020

机译：电阻切换随机存取存储器（RRAM）：对实际应用的分析，建模和表征
6. Resistive Random Access Memory (RRAM): an Overview of Materials Switching Mechanism Performance Multilevel Cell (mlc) Storage Modeling and Applications [O] . Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday 2020

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7. Binary Resistive-Switching-Device-Based Electronic Synapse with Spike-Rate-Dependent Plasticity for Online Learning [O] . -1

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8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

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A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

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