Studies of impurity deposition/implantation in JET divertor tiles using SIMS and ion beam techniques

摘要

At the end of C4 campaign at JET, a 1 % SiH_4/99% D_2 mixture and pure ~(13)CH_4 were injected into the torus from the outer divertor wall and from the top of the vessel, respectively, in order to study material transport and scrape-off layer (SOL) flows. A set of MkIIGB tiles was removed during the 2001 shutdown for surface analysis. The tiles were analysed with secondary ion mass spectrometry (SIMS) and time-of-flight elastic recoil detection analysis (TOF-ERDA). ~(13)C was detected in the inner divertor wall tiles implying material transport from the top of the vessel. Silicon was detected mainly at the outer divertor wall tiles and very small amounts were found in the inner divertor wall tiles. Si amounts in the inner divertor wall tiles were so low that rigorous conclusions about material transport from divertor outboard to inhoard cannot be made.