Transport evidence of 3D topological nodal-line semimetal phase in ZrSiS

摘要

Abstract Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional (3D) analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance (MR) and the combined de Hass-van Alphen (dHvA) and Shubnikov-de Hass (SdH) oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6 × 1021 cm−3 and a perfect electron/hole compensation ratio of 0.94, which is consistent with the semi-classical expression fitting of Hall conductance G xy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.