Finite element modeling of a microelectronic structure under uniform thermal loading

摘要

The deformation and thermal stresses that develop in copper/polyimide high-density interconnects subjected to thermal loading are investigated numerically. The finite element method is used to analyze the response of a single-level test structure composed of a thin film mounted on top of a silicon substrate. The structure is assumed to be stress-free at an elevated temperature, and is then cooled at various Rates.