IMEC grows AlGaN/GaN high-electron transistor structures on 150mm silicon

摘要

IMEC has demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) heterostructures on 150mm silicon (Si) wafers. The process paves the way to low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.