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首页> 外文期刊>IEE Proceedings. Part H >Wideband active microwave isolators using GaAs MMIC technology
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Wideband active microwave isolators using GaAs MMIC technology

机译:使用GaAs MMIC技术的宽带有源微波隔离器

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摘要

The paper is concerned with circuit designs for wideband microwave isolators realised as monolithic microwave integrated circuits using depletion-mode GaAs MESFETs. An unbalanced version of a previously published balanced design is shown to have an interesting property of an approximately linear transmission function but the port impedances remain nonlinear. A previously published general circuit synthesis method is used to implement an isolator with transmission function and port impedances both of which are linearised. Measurements on a GaAs MMIC implementation are presented.
机译:本文涉及宽带微波隔离器的电路设计,该电路设计为使用耗尽型GaAs MESFET的单片微波集成电路。先前发布的平衡设计的不平衡版本显示出具有近似线性传输函数的有趣特性,但是端口阻抗保持非线性。使用先前发布的通用电路综合方法来实现具有均线性化的传输函数和端口阻抗的隔离器。提出了在GaAs MMIC实施方案上的测量。

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