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Analysis of a penny-shaped crack with semi-permeable boundary conditions across crack face in a 3D thermal piezoelectric semiconductor

机译:3D热压电半导体裂缝面上半透边界条件的一分钱分析

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摘要

In this paper, we study a penny-shaped crack model with electrically and thermally semi-permeable boundary conditions in a three-dimensional transversely isotropic piezoelectric semiconductor. An extended displacement discontinuity boundary element method together with an iterative process is proposed to analyze the penny-shaped crack model. The extended displacement discontinuities across crack face, electric displacement and heat flux along an inner crack cavity, as well as extended stress intensity factors near crack front are obtained via the proposed method. The effects on extended intensity factors near crack front are discussed, including boundary conditions across crack face, applied loads and initial electron concentration. It is shown that boundary conditions across crack face significantly affect extended stress intensity factors near crack front. This implies that a larger initial electron concentration can lead to electrical failure.
机译:在本文中,我们在三维横向各向同性压电半导体中研究了一分钱形状的裂纹模型,在三维横向各向同性压电半导体中具有电和热半透边界条件。 提出了一种扩展位移不连续边界元法与迭代过程一起分析了便士形裂缝模型。 通过所提出的方法获得沿着内裂缝腔的裂缝面,电力位移和热通量以及裂缝前面附近的延长应力强度因子的扩展位移不连续性。 讨论了对裂缝前近裂缝前的延长强度因子的影响,包括横跨裂缝面,施加的负载和初始电子浓度的边界条件。 结果表明,裂缝面的边界条件显着影响裂缝前方的延长应力强度因子。 这意味着较大的初始电子浓度会导致电气故障。

著录项

  • 来源
    《Engineering analysis with boundary elements》 |2021年第10期|76-85|共10页
  • 作者单位

    School of Mechanics and Safety Engineering Zhengzhou University Zhengzhou Henan 450001 People's Republic of China;

    School of Mechanics and Safety Engineering Zhengzhou University Zhengzhou Henan 450001 People's Republic of China School of Mechanical and Power Engineering Zhengzhou University Zhengzhou Henan 450001 People's Republic of China Henan Key Engineering Laboratory for Anti-Fatigue Manufacturing Technology Zhengzhou University Zhengzhou Henan 450001 People's Republic of China;

    School of Civil and Mechanical Engineering Curtin University Perth Western Australia 6845 Australia;

    School of Mechanics and Safety Engineering Zhengzhou University Zhengzhou Henan 450001 People's Republic of China Henan Key Engineering Laboratory for Anti-Fatigue Manufacturing Technology Zhengzhou University Zhengzhou Henan 450001 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Piezoelectric semiconductor; Penny-shaped crack; Semi-permeable boundary condition; Extended stress intensity factors;

    机译:压电半导体;便士形裂缝;半透明边界条件;扩展压力强度因子;

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