Data on Microelectronic Engineering Detailed by Researchers at University of Texas

摘要

2011 AUG 17 - (VerticalNews.com) -- According to the authors of a study fromrnRichardson, Texas, "The inversion layer electron mobility in n-channel In0.53Ga0.47AsrnMOSFET's with HfO2 gate dielectric with several substrate impurity concentrations (similar torn1 x 10(16) cm(-3) to similar to 1 x 10(18) cm(-3)) and various surface preparations (HF surfacernclean, (NH4)(2)S surface clean and PECVD a-Si interlayer with a HfO2 gate dielectric) havernbeen studied. The peak electron mobility is observed to be strongly dependent on the surfacernpreparation, but the high field mobility is observed to be almost independent of the surfacernpreparation."