机译:PFC转换器加速应力下SiC MOSFET降解的调查
Hunan Univ Coll Elect & Informat Engn Changsha 410082 Peoples R China;
Hunan Univ Coll Elect & Informat Engn Changsha 410082 Peoples R China;
Hunan Univ Coll Elect & Informat Engn Changsha 410082 Peoples R China;
Hunan Univ Coll Elect & Informat Engn Changsha 410082 Peoples R China;
Hunan Univ Coll Elect & Informat Engn Changsha 410082 Peoples R China;
IIT Dept Elect & Comp Engn Chicago IL 60616 USA;
Aging test; degradation monitoring; gate oxide degradation; silicon carbide (SiC) MOSFET;
机译:重复开关应力下SiC功率MOSFET降解机制的研究
机译:体二极管浪涌电流应力下SiC MOSFET降解的调查
机译:重复雪崩应力下双沟道SiC功率MOSFET性能下降的研究
机译:PFC转换器加速应力下SiC MOSFET降解的调查
机译:串联连接SIC MOSFET的主动电压平衡控制及其在模块化多级转换器中的应用
机译:紫外发光二极管阶梯应力加速降解测试策略的研究
机译:短路应力对SiC功率MOSFET中SiO2电介质劣化的影响
机译:用si和siC mOsFET研究DC-DC转换器功率密度