Double-heterostructure AlGaAs/GaAs lasers grown on the mesas of trenched Si substrate by molecular beam epitaxy

摘要

The growth and device characteristics of stripe Al/sub 0.26/Ga/sub 0.74/As/GaAs double-heterostructure lasers grown on mesas of trenched Si by MBE is reported. The TE and TM modes lase at different injection levels depending on the laser stripe width. This behaviour is attributed to the variation of the residual thermal stress present in the laser structures as a function of stripe width. By comparing the polarisations of the laser radiations from a narrow and broad stripe laser, it is found that a narrow mesa is effective in reducing the residual thermal stress.