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机译:金属有机气相外延生长的掺Mg的渐变型基极GaAs / AlGaAs异质结双极晶体管
Siemens Res. Labs., Munich, West Germany;
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; magnesium; semiconductor technology; solid-state microwave devices; vapour phase epitaxial growth; 20 GHz; Al xGa 1-xAs:Mg graded base; GaAs-AlGaAs; HBT; MOVPE; current gain; metalorganic vapour phase epitaxy; semiconductors; transit frequencies;
机译:分子束外延生长的平面掺杂二维空穴气基AlGaAs / GaAs异质结双极晶体管
机译:金属有机气相外延生长的GaAs基场效应晶体管AlGaAs缓冲结构
机译:分子束外延生长的高增益低导通电压AlGaAs / GaAsNSb / GaAs异质结双极晶体管
机译:金属有机气相外延生长的GaAs,GaInP的表面形态,用于以氮为载气的异质结双极晶体管应用
机译:利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
机译:AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
机译:通过分子束外延在(100)Si上生长的GaAs / AlGaAs异质结Pnp双极晶体管
机译:分子束外延的alGaas / InGaas / Gaas应变层异质结双极晶体管