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机译:InGaAs-GaAs-AlGaAs应变层分布反馈脊形波导量子阱异质结构激光器阵列
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA;
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor laser arrays; 110 to 190 mA; 36 percent; 400 mW; 53 mW; CW output powers; CW threshold current; DFB ridge waveguide laser arrays; InGaAs-GaAs-AlGaAs; MOCVD growth step; highest order supermode; phase-locked emission; pulse power; semiconductors; single longitudinal mode; strained-layer;
机译:InGaAs-GaAs-AlGaAs应变层分布反馈脊形波导量子阱异质结构激光器的表征
机译:适用于WDM应用的选择性区域MOCVD的十二通道应变层InGaAs-GaAs-AlGaAs掩埋异质结构量子阱激光器阵列
机译:分布式反馈脊形波导量子阱异质结构激光器
机译:GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束异质结构单量子阱激光器的光学和微波性能
机译:光纤耦合多通道波导阵列,具有集成的分布式反馈染料激光源。
机译:使用分布式反馈量子级联激光阵列和石英增强的光声传感宽带检测甲烷和一氧化二氮
机译:InGaAs-GaAs-AlGaAs横向耦合分布反馈(LC-DFB)脊形激光二极管的CW性能
机译:ECR-IBaE制备的应变层InGaas-alGaas量子阱脊波导二极管激光器的均匀线性阵列