首页> 外国专利> Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration

Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration

机译:从脊到掩埋异质结构波导的自对准过渡,特别是对于多波长激光阵列集成

摘要

An opto-electronic integrated circuit including an active ridge waveguide (60), for example, a semiconductor laser diode, and a passive buried heterostructure semiconductor waveguide (64). The two types of waveguides are chosen for their respective tasks so as to minimize the lasing wavelength dependencies arising from fabricational variations and to simultaneously reduce the allowable bending radius, thus reducing the chip size. The two waveguides are coupled by a transition structure (62) including a laterally undefined slab waveguide. A fabricational method is described that self-aligns the ridge and buried heterostructure waveguides so that the transition loss is negligible. The method can be integrated with the fabrication of a window facet (118', 118") between an end of the ridge waveguide and the chip edge, which prevents unintended back reflections from the chip edge.
机译:一种光电集成电路,包括有源脊形波导(60),例如半导体激光二极管,和无源掩埋异质结构半导体波导(64)。选择两种类型的波导用于其各自的任务,以最小化由于制造差异而产生的激光波长依赖性,并同时减小允许的弯曲半径,从而减小芯片尺寸。两个波导通过包括横向未定义的平板波导的过渡结构(62)耦合。描述了一种制造方法,该方法可自对准脊形和埋入式异质结构波导,从而使过渡损耗可忽略不计。该方法可以与在脊形波导的端部与芯片边缘之间的窗口小平面(118',118”)的制造集成在一起,这防止了来自芯片边缘的意外的背反射。

著录项

  • 公开/公告号US5805755A

    专利类型

  • 公开/公告日1998-09-08

    原文格式PDF

  • 申请/专利权人 TELLIUM INC.;

    申请/专利号US19960664599

  • 发明设计人 MARTIN AMERSFOORT;CHUNG-EN ZAH;

    申请日1996-06-17

  • 分类号G02B6/10;

  • 国家 US

  • 入库时间 2022-08-22 02:38:39

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