0.98 mu m strained-layer GaInAs/GaInAsP/GaInP quantum well lasers

摘要

Strained-layer GaInAs/GaInAsP/GaInP separate-confinement-heterostructure multiquantum well lasers which emit at a wavelength of 0.98 mu m are reported. These lasers exhibit a low threshold current density of 153 A/cm/sup 2/ and high characteristic temperature up to 235 K. The internal waveguide loss and internal quantum efficiency are 5.0 cm/sup -1/ and 83%, respectively. Singlemode continuous wave operation is found up to an output power of 80 mW at room temperature for an HR/AR coated 5.5*800 mu m/sup 2/ ridge waveguide laser.