Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature

摘要

A unique delayed-turn-on phenomenon in an accumulation-type SOI pMOS device operating at 77 K based on the low-temperature PISCES simulation is reported. As compared with the 300 K case, in the delayed-turn-on region, the accumulation-type SOI pMOS device at 77 K may not provide a larger transconductance as a result of the carrier freezeout effects in the thin film.