Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation

Dollfus P.; Galdin S.

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Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation

机译：蒙特卡罗模拟对AlGaAs / InGaAs HEMT的微波分析

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The current gain of an intrinsic HEMT is determined as function of frequency using small-signal Monte Carlo simulations. The f/sub T/ obtained is in good agreement with the value derived from steady-state results by F/sub T/=g/sub m//2 pi C/sub G/. A set of Z parameters is also calculated and an equivalent circuit model is deduced.

机译：使用小信号蒙特卡洛模拟确定固有HEMT的当前增益是频率的函数。所获得的f / sub T /与从稳态结果得出的值f / sub T / = g / sub m // 2 pi C / sub G /非常吻合。还计算了一组Z参数，并推导了等效电路模型。

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《Electronics Letters》 |1992年第5期|P.458-460|共3页
作者
Dollfus P.; Galdin S.;
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作者单位

Inst. d'Electron. Fondamentale, Paris Univ., France;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; Monte Carlo methods; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; AlGaAs-InGaAs; semiconductors;

机译：III-V类半导体;蒙特卡罗方法;铝化合物;等效电路;砷化镓;高电子迁移率晶体管;铟化合物;半导体器件模型;固态微波器件;AlGaAs-InGaAs;半导体;

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2. Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations [J] . Kim K.W., Tian H. IEEE Transactions on Electron Devices . 1991,第8期

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3. Monte Carlo simulation of 0.35- mu m gate-length GaAs and InGaAs HEMTs [J] . Park D.H., Brennan K.F. IEEE Transactions on Electron Devices . 1990,第3期

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Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation

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