Light emitting real-space transfer devices fabricated with strained GaAs/In/sub 0.2/Ga/sub 0.8/As/AlGaAs heterostructures

摘要

Light emitting devices based on real-space electron transfer are implemented with strained GaAs/InGaAs/AlGaAs heterostructures on GaAs substrates. Both GaAs channel and In/sub 0.2/Ga/sub 0.8/As channel devices are fabricated. The device energy band diagrams are simulated by using the MEDICI program. The optical measurement shows that the photocurrent on/off ratio of InGaAs channel devices is better than that of GaAs channel devices.