Ultra-high speed, low power monolithic photoreceiver using InP/lnGaAs double-heterojunction bipolar transistors

摘要

A first 40 Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a PIN/DHBT configuration in which the PIN-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54 mW.