The thermal behaviour of radio-frequency power LDMOS transistors is analysed. Pulsed characterisation techniques are proposed to provide a straightforward method for determining the device zero temperature coefficient point. An LDMOS technology currently used for power amplification in L-band radiotelephony applications is studied. Load-pull measurements and nonlinear simulations are used to determine the bias conditions for stable operation with temperature. Finally, a model is proposed to take into account the influence of the dissipated power on the device responses during nonlinear operation.
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