机译:恢复时间短的高压SiC二极管
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg;
carrier lifetime; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 4.2 V; 4H-SiC diodes; 5.8 V; 6 kV; 7 ns; SiC; blocking capability; high lifetime; high voltage SiC diodes; low forward voltage drop; metallurgical boundary; p+n junction; small carrier lifetime; small recovery time;
机译:通过锐利回收SiC漂移二极管产生高压脉冲(N基本与P碱基二极管)
机译:基于6.5 kV Si-IGBT / Si-PiN二极管,6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管
机译:(000-1)C面上4H-SiC pin二极管和高压4H-SiC pin二极管的正向电压降级,正向降级减小
机译:基于6.5kV Si-IGBT / Si-PiN二极管,6.5kV Si-IGBT / SiC-JBS二极管和10kV SiC MOSFET / SiC-JBS二极管的大功率中压转换器的设计比较
机译:高压(> 10 kV)4H-SiC MPS二极管的设计,制造和表征
机译:4H-SIC漂移步骤回收二极管具有硬度恢复的超结
机译:高压4H-siC piN二极管的电气特性和载流子寿命测量