InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InP V-grooves

摘要

InP-based OEIC photoreceivers have been fabricated using a shared layer integration scheme of refracting facet photodiodes (RFPDs) and heterojunction bipolar transistors (HBTs) (for the first time, to the authors' knowledge). Furthermore, on-chip InP V-grooves were monolithically integrated with RFPD/HBT photoreceivers for efficient optical coupling with optical fibres.