Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth

摘要

A novel structure and method for fabricating regions of high and low modal gain on the same chip are reported, which enable diode lasers with maximum efficiency to be monolithically integrated with multiple-section semiconductor optical amplifiers having both high gain and high saturation power. This method uses quantum-well intermixing and an offset-quantum-well regrowth to achieve regions with high and low optical confinement. Fabry-Perot broad-area lasers were used to characterise the material in both regions.