Spin-polarised quantum dot light-emitting diodes with high polarisation efficiency at high temperatures

摘要

Light-emitting diode heterostructures with 150 nm Ga_(0.95)Mn_(0.05)As spin injector layers and In_(0.4)Ga_(0.6)As quantum dot active regions were grown and fabricated into 600 μm diameter mesa-shaped surface-emitting devices. Polarised light at 1.05 μm is observed with an output polarisation efficiency of 30% and record high temperature operation.