Selective oxidation fin channel MOSFETs with low source/drain series resistance

摘要

Novel selective oxidation fin channel MOSFETs (SoxFETs) have been developed for fabricating fin channel MOSFETs with low source/ drain (S/D) series resistance. Using this technique, SoxFETs have the surround gate structure and gradually increased S/D extension regions. The new structure demonstrates a 74% reduction in S/D series resistance compared with the control device. It was also found that the SoxFET behaved better than the control device in current drivability by suppressing subthreshold swing and drain induced barrier lowering characteristic degradation.