机译:具有阶梯厚度持续电压层的SOI高压器件
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China;
机译:具有阶梯厚度持续电压层的SOI高压器件
机译:一种新型的具有阶梯厚度漂移区的SOI高压器件及其电场和击穿电压的分析模型
机译:具有高能量注入埋层的高压MOS器件-低压CMOS工艺可与高压MOS器件媲美
机译:在薄SOI上模拟700 V高压器件结构-衬底偏置对SOI器件的影响
机译:千兆位光网络接口卡的设计和布局方法,用于大型调制器和MEMs设备阵列中的高压驱动器。
机译:超高真空大面积扫描探针显微镜经演示可用于高压设备上的静电力测量
机译:高压薄膜SOI器件线性掺杂分布的数值模拟